JANSR2N7401 Datasheet, PDF(1/8 Page) Intersil Corporation – 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET

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JANSR2N7401 Datasheet, PDF (1/8 Pages) Intersil Corporation – 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET

Formerly FSS234R4

JANSR2N7401

August 1998

File Number 4571

6A, 250V, 0.600 Ohm, Rad Hard,

N-Channel Power MOSFET

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciï¬cally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environ-

ments. The dose rate and neutron tolerance necessary for

military applications have not been sacriï¬ced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings. Numer-

ous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ï¬eld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be oper-

ated directly from integrated circuits.

Also available at other radiation and screening levels. See us

on the web, Intersilâ home page: http://www.semi.inter-

sil.com. Contact your local Intersil Sales Office for additional

information.

Features

â¢ 6A, 250V, rDS(ON) = 0.600â¦

â¢ Total Dose

- Meets Pre-RAD Speciï¬cations to 100K RAD (Si)

â¢ Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up

to 80% of Rated Breakdown and VGS of 10V Off-Bias

â¢ Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS

- Typically Survives 2E12 if Current Limited to IDM

â¢ Photo Current

- 4.0nA Per-RAD(Si)/s Typically

â¢ Neutron

- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2

- Usable to 1E14 Neutrons/cm2

Symbol

Ordering Information

PART NUMBER

PACKAGE

JANSR2N7401

TO-257AA

BRAND

JANSR2N7401

Die Family TA17638.

MIL-PRF-19500/632.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciï¬cations.

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

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