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| JANSR2N7294 Datasheet, PDF (3/7 Pages) Intersil Corporation – 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET | |||
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JANSR2N7294
Electrical Speciï¬cations up to 100K RAD TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS
VGS = 0, ID = 1mA
200
Gate to Source Threshold Volts (Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON)
VGS = 10V, ID = 23A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)
VGS = 10V, ID = 15A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.0
100
25
2.78
0.115
UNITS
V
V
nA
µA
V
â¦
Typical Performance Curves Unless Otherwise Speciï¬ed
28
100
TC = 25oC
24
20
16
12
8
4
0
-50
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100µs
10
1ms
1
0.1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
2-25
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