JANSR2N7294 Datasheet, PDF (1/7 Pages) Intersil Corporation – 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET

JANSR2N7294
Formerly FRF250R4
June 1998
23A, 200V, 0.115 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 23A, 200V, r_DS(ON) = 0.115Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm²
- Usable to 1E14 Neutrons/cm²
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7294
TO-254AA
Die family TA17652.
MIL-PRF-19500/605.
BRAND
JANSR2N7294
Description
The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (n^o) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa-
tion.
Symbol
D
G
Package
S
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.
2-23
File Number 4292.1