ISL73096RH_09 Datasheet, PDF (3/5 Pages) Intersil Corporation – Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

ISL73096RH, ISL73127RH, ISL73128RH
Die Characteristics
DIE DIMENSIONS:
52.8 mils x 52.0 mils x 14 mils ±1 mil
1340μm x 1320µm x 355.6µm ±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Top Metallization:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
3.04 x 10⁵A/cm²
Transistor Count:
5
(2) Q2C (1) Q1C (16) Q1E (15) Q1B
(3) Q2E
(4) Q2B
(5) NC
(6) Q3C
(14) Q5B
(13) Q5E
(12) Q5C
(11) Q4C
(7) Q3E (8) Q3B (9) Q4B (10) Q4E
FIGURE 1. ISL73096RH, ISL73127RH
3
FN6475.2
March 23, 2009