ISL73096RH_09 Datasheet, PDF (1/5 Pages) Intersil Corporation – Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

ISL73096RH, ISL73127RH, ISL73128RH
®
Data Sheet
March 23, 2009
FN6475.2
Radiation Hardened Ultra High Frequency
NPN/PNP Transistor Arrays
The ISL73096RH, ISL73127RH and ISL73128RH are
radiation hardened bipolar transistor arrays. The
ISL73096RH consists of three NPN transistors and two PNP
transistors on a common substrate. The ISL73127RH
consists of five NPN transistors on a common substrate. The
ISL73128RH consists of five PNP transistors on a common
substrate. One of our bonded wafer, dielectrically isolated
fabrication processes provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-07218. A “hot-link” is provided
on our website for downloading.
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10⁵RAD(Si)
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (F_T) . . . . . . . . .8GHz (Typ)
• NPN Current Gain (h_FE). . . . . . . . . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (V_A) . . . . . . . . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (F_T). . . . . . . . 5.5GHz (Typ)
• PNP Current Gain (h_FE). . . . . . . . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (V_A) . . . . . . . . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note AN9315
• High Frequency Converters
• Synchronous Detector
Ordering Information
ORDERING NUMBER
5962F0721801V9A
5962F0721801VXC
5962F0721802V9A
5962F0721802VXC
5962F0721803V9A
5962F0721803VXC
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
ISL73128RHF/PROTO
ISL73128RHX/SAMPLE
INTERNAL MKT. NUMBER
ISL73096RHVX
ISL73096RHVF
ISL73127RHVX
ISL73127RHVF
ISL73128RHVX
ISL73128RHVF
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
ISL73128RHF/PROTO
ISL73128RHX/SAMPLE
TEMP. RANGE (°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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