ISL6801 Datasheet, PDF (3/6 Pages) Intersil Corporation – High Voltage Bootstrap High Side Driver

ISL6801
Absolute Maximum Ratings
Supply Voltage, V_CC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16V
Driver Output Stage Voltage, V_B (Referred to GND) . . . . . . . . .130V
Source Reference Voltage, V_S
(-5V for 0.5ms, MOSFET Off). . . . . . . . . . . . . . . . . . . . (Min) -1.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Max) 120V
ESD Rating, V_ESD
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . (Min) 820V
(Per MIL-STD-883 Method 3015.7)
Thermal Information
Thermal Resistance (Typical, Note 1)
θ_JA (^oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
Maximum Junction Temperature (Plastic Package) . . . . . . . .150^oC
Maximum Storage Temperature Range . . . . . . . . . -55^oC to 150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .245^oC
(SOIC Lead Tips Only)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40^oC to 125^oC
Supply Voltage Range (Max) . . . . . . . . . . . . . . . . . . . . 4.5V to 6.5V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications All values are over full temperature range.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Operating Temperature Range
Source Reference Voltage
Supply Voltage (Note 2)
Driver Output Supply
Switching Frequency
T_A
-40
VS
-1.8V Continuous, VB/V_OH must stay
-1.5
low, IN = 0V, RES = 5V, V_CC = 4.5V and
6.5V, VB = 5V and 12V,
(Load R = 50Ω, C = 6.8nF)
T_A = -40 to 125^oC
V_CC
4.5
V_{VB - VS} Ident. to V_GS of MOSFET Device
4.0
Functional
V_{VB - GND}
2.0
f
Guaranteed by Design
100
Voltage Transconductance (Note 3)
dVs/dt
-
Peak Gate Drive Current
I_HOpeak
Sink/Source Current VB = 5V and 16V,
-
100ns
Continuous Gate Drive Current (Note 3)
I_HOcont
Sink/Source Current Continuous
6.5
Gate Drive Level LOW
V_{HOL, VS} IN at H, I_HO = 1mA, VB-VS = 5V and 16V
-
Gate Drive Level LOW
V_{HOL, VS} IN at H, I_HO = 100mA
-
Gate Drive Level HIGH
V_{VB, HOH} IN at L, I_HO = 1mA, VB-VS = 5V and 16V
-
Gate Drive Level HIGH
V_{VB, HOH} IN at L, I_HO = 100mA
-
Total IN to Output Delay (Figure 1)
td_{IN-HOH, L} at V_CC = 5.0V, RES = 5V,
-
Output Trigger Level: 3.5V ON at
VB = 5V, 1.0V OFF at VB = 16V,
Input 2.5V (Load R = 50Ω, C = 6.8nF)
Total RES to Output Delay (Figure 2)
td_{RES - HOH, L} VB-VS = 5V and 16V,
-
(Load R = 50Ω, C = 6.8nF)
Output Rise/Fall Times
t_{HOH, L}
VB-VS = 5V
-
Fall/Rise (Load R = 50Ω, C = 6.8nF)
VB-VS = 16V
-
VB Drop Voltage (Figure 4, Note 4)
VB_DROP VB-VS = 9.0V, C₁₀₀ = 1µF,
-
(Load R = 50Ω, C = 6.8nF)
TYP
MAX UNITS
-
125
o_C
-
120
V
-
6.5
V
8.5
16.0
V
-
-
V
-
-
kHz
-
500
V/µs
200
-
mA
8
-
mA
-
0.3
V
-
2.2
V
-
0.5
V
-
2.2
V
1.0
3.0
µs
1.0
3.0
µs
100
500
ns
200
500
ns
100
210
mV
(Note 5)
3