ISL6251_06 Datasheet, PDF (3/20 Pages) Intersil Corporation – Low Cost Multi-Chemistry Battery Charger Controller

ISL6251, ISL6251A
Absolute Maximum Ratings
DCIN, CSIP, CSON to PGND . . . . . . . . . . . . . . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
PHASE to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
ACLIM, ACPRN, CHLIM, VDD to GND . . . . . . . . . . . . . . -0.3V to 7V
BOOT-PHASE, VDDP-PGND . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
VREF, CELLS to GND . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . .-0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Information
Thermal Resistance
θ_JA(°C/W) θ_JC (°C/W)
QFN Package (Notes 4, 6). . . . . . . . . .
39
9.5
QSOP Package (Note 5) . . . . . . . . . . .
88
N/A
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET is below 0V, the current through ACSET should be limited to less than 1mA.
4. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = 1.5V, ACLIM = VREF, VADJ = Floating,
EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, C_VDD = 1µF, I_VDD = 0mA, T_A = -10°C to +100°C,
T_J ≤ 125°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN = VDD or GND, 7V ≤ DCIN ≤ 25V
1.4
3
mA
Battery Leakage Current (Note 7)
DCIN = 0, no load
3
10
µA
VDD Output Voltage/Regulation
VDD Undervoltage Lockout Trip Point
7V ≤ DCIN ≤ 25V, 0 ≤ I_VDD ≤ 30mA
VDD Rising
4.925
5.075
5.225
V
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
Reference Output Voltage VREF
0 ≤ I_VREF ≤ 300µA
2.365
2.39
2.415
V
Battery Charge Voltage Accuracy
CSON = 16.8V, CELLS = VDD, VADJ = Float
-0.5
0.5
%
CSON = 12.6V, CELLS = GND, VADJ = Float
-0.5
0.5
%
CSON = 8.4V, CELLS = Float, VADJ = Float
-0.5
0.5
%
CSON = 17.64V, CELLS = VDD, VADJ = VREF -0.5
0.5
%
CSON = 13.23V, CELLS = GND, VADJ = VREF -0.5
0.5
%
CSON = 8.82V, CELLS = Float, VADJ = VREF
-0.5
0.5
%
CSON = 15.96V, CELLS = VDD, VADJ = GND
-0.5
0.5
%
CSON = 11.97V, CELLS = GND, VADJ = GND
-0.5
0.5
%
CSON = 7.98V, CELLS = Float, VADJ = GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
1.24
1.26
1.28
V
ACSET Input Bias Current Hysteresis
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET ≥ 1.26V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
µA
3
FN9202.2
May 10, 2006