ISL5571A Datasheet, PDF (3/12 Pages) Intersil Corporation – Access High Voltage Switch

ISL5571A
Absolute Maximum Ratings T_A = 25^oC
Maximum Supply Voltages
(V_DD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V
(V_BAT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -19V to -100V
ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . .500V
Die Characteristics
Substrate Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_BAT
Process . . . . . . . . . . . . . . . . . . . . . . . .6-inch BIMOS Bonded Wafer
Thermal Information
Thermal Resistance (Typical, Note 1)
θ_JA (^oC/W)
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
Maximum Junction Temperature Plastic . . . . . . . . . . . . . . . . .150^oC
Maximum Storage Temperature Range . . . . . . . . . -65^oC to 150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300^oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ_JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications T_A = -40^oC to 85^oC, Unless Otherwise Specified
TABLE 1. BREAK SWITCHES - ISL5571A - SW1, SW2
PARAMETER
OFF-State Leakage Current:
-40^oC
25^oC
85^oC
ON-Resistance:
-40^oC
25^oC
85^oC
ON-Resistance Match
ON-State Voltage (Note 2)
DC Current Limit:
-40^oC
25^oC
85^oC
Dynamic Current Limit
(t = <0.5µs)
Isolation:
-40^oC
25^oC
85^oC
TEST CONDITION
MEASURE
V_{SWITCH (DIFFERENTIAL)} = -310V to GND
V_{SWITCH (DIFFERENTIAL)} = -60V to +250V
V_{SWITCH (DIFFERENTIAL)} = -320V to GND
V_{SWITCH (DIFFERENTIAL)} = -60V to +260V
V_{SWITCH (DIFFERENTIAL)} = -330V to GND
V_{SWITCH (DIFFERENTIAL)} = -60V to +270V
I_SWITCH
I_SWITCH
I_SWITCH
T_LINE = ±10mA, ±40mA, T_BAT = -2V
T_LINE = ±10mA, ±40mA, T_BAT = -2V
T_LINE = ±10mA, ±40mA, T_BAT = -2V
Per ON-resistance Test Condition of SW1, SW2
Break Switches in ON-State; I_switch = I_LIMIT at
50/60Hz
∆V_ON
∆V_ON
∆V_ON
Magnitude
r_ON SW1 - r_ON SW2
V_ON
V_{SWITCH (ON)} = ±10V
V_{SWITCH (ON)} = ±10V
V_{SWITCH (ON)} = ±10V
Break Switches in ON-state; Ringing Access
Switches OFF; Apply ±1000V at 10/1000µs
Pulse; Appropriate External Secondary
Protection in Place
I_SWITCH
I_SWITCH
I_SWITCH
I_SWITCH
V_SWITCH (Both Poles) = ±310V
Logic Inputs = GND
V_SWITCH (Both Poles) = ±320V
Logic Inputs = GND
V_SWITCH (Both Poles) = ±330V
Logic Inputs = GND
I_SWITCH
I_SWITCH
I_SWITCH
dV/dt Sensitivity (Note 3)
NOTES:
2. Choice of secondary protection should ensure this rating is not exceeded.
3. Applied voltage is 100V_P-P square wave at 100Hz.
MIN TYP MAX UNITS
-
-
1
µA
-
-
1
µA
-
-
1
µA
-
12
-
Ω
-
16
-
Ω
-
-
28
Ω
0.05 0.5
Ω
-
-
220 V_Peak
-
-
250 mA
-
125
-
mA
80
-
mA
-
1.5
2.0
A
-
-
1
µA
-
-
1
µA
-
-
1
µA
-
5000
-
V/µs
3