IRFR120 Datasheet, PDF (3/7 Pages) Intersil Corporation – 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs

IRFR120, IRFU120
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
I_SDM
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
MIN
TYP
MAX ^UNITS
-
-
8.4
A
-
-
34
A
S
Source to Drain Diode Voltage (Note 2)
V_SD
T_J = 25^oC, I_SD = 8.4A, V_GS = 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
t_rr
T_J = 25^oC, I_SD = 8.4A, dI_SD/dt = 100A/µs
55
110
240
ns
Reverse Recovery Charge
Q_RR
T_J = 25^oC, I_SD = 8.4A, dI_SD/dt = 100A/µs
0.25
0.53
1.1
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 25V, starting T_J = 25^oC, L = 770µH, R_G = 25Ω, Peak I_AS = 8.4A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
10^-₁²_0-5
SINGLE PULSE
10^-4
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
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