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IRFR120 Datasheet, PDF (2/7 Pages) Intersil Corporation – 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
◁
IRFR120, IRFU120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRFR120, IRFU120
100
100
8.4
5.9
34
±20
50
0.33
36
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 10)
100
-
-
V
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
-
-
25
µA
-
250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
8.4
-
-
A
IGSS VGS = ±20V
-
- ±500 nA
rDS(ON) ID = 5.9A, VGS = 10V (Figures 8, 9)
- 0.25 0.27 Ω
gfs
VDS ≥ 50V, ID = 5.9A (Figure 12)
2.8 4.2
-
S
td(ON)
tr
td(OFF)
VDD = 50V, ID ≅ 8.4A, RGS = 18Ω, RL = 5.1Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
8.8 13
ns
-
30 45
ns
-
19 29
ns
tf
-
20 30
ns
Qg(TOT) VGS = 10V, ID = 8.4A, VDS = 0.8 x Rated BVDSS,
-
9.7 15
nC
IG(REF) = 1.5mA (Figure 14) Gate Charge is
Qgs
Essentially Independent of Operating Temperature
-
2.2 3.3 nC
Qgd
-
2.3 3.4 nC
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
350
-
pF
COSS
-
130
-
pF
CRSS
-
24
-
pF
LD
Measured from the Drain Modified MOSFET
-
4.5
-
nH
Lead, 6.0mm (0.25in) from Symbol Showing the
Package to Center of Die Internal Device
LS
Measured from the Source Inductances
Lead, 6.0mm (0.25in) from
D
-
7.5
-
nH
Package to Source
LD
Bonding Pad
G
LS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Typical Solder Mount
S
-
-
3.0 oC/W
-
-
110 oC/W
4-378
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