IRFBC40 Datasheet, PDF (3/7 Pages) STMicroelectronics – N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

IRFBC40
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN TYP MAX UNITS
-
-
6.2
A
-
-
25
A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = 6.2A, V_GS = 0V (Figure 8)
T_J = 25^oC, I_SD = 6.2A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = 6.2A, dI_SD/dt = 100A/µs
-
-
1.5
V
200 450 940
ns
1.8 3.8 8.0
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 16mH, R_G = 25Ω, peak I_AS = 6.8A
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 ^0.1
0.05
00..0022
0.01
10^-2
10^-3
10^-5
P_DM
SINGLE PULSE
10^-4
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
t₁
t₂ t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-265