IRFBC40 Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

Data Sheet
IRFBC40
July 1999 File Number 2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17426.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFBC40
TO-220AB
IRFBC40
NOTE: When ordering, include the entire part number.
Features
• 6.2A, 600V
• r_DS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-263
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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