IRF9520 Datasheet, PDF (3/7 Pages) Intersil Corporation – 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

IRF9520
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD
Modified MOSFET Sym-
Pulse Source to Drain Current
(Note 3)
I_SDM
bol Showing the Integral
Reverse P-N Junction
D
Diode
G
MIN
TYP
MAX UNITS
-
-
-6.0
A
-
-
-24
A
S
Source to Drain Diode Voltage
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
T_C = 25^oC, I_SD = -6.0A, V_GS = 0V
-
(Figure 13)
t_rr
T_J = 150^oC, I_SD = -6.0A, dI_SD/dt = 100A/µs
-
Q_RR
T_J = 150^oC, I_SD = -6.0A, dI_SD/dt = 100A/µs
-
-
-1.5
V
230
-
ns
1.3
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 25V, starting T_J = 25^oC, L = 15.4mH, R_G = 25Ω, peak I_AS = 6.0A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T_A, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
6.0
4.8
3.6
2.4
1.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
P_DM
10^-3
10^-2
10^-1
t₁, RECTANGULAR PULSE DURATION (s)
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
4-5