IRF9520 Datasheet, PDF (2/7 Pages) Intersil Corporation – 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

IRF9520
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRF9520
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain
T_C =100^oC . . .
Current
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-6
-4
-24
±20
40
0.32
V
V
A
A
A
V
W
W/^oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
370
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to T_J = 125^oC.
Electrical Specifications
T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
SYMBOL
TEST CONDITIONS
BV_DSS
V_GS(TH)
I_DSS
I_D(ON)
I_GSS
r_DS(ON)
g_fs
I_D = -250µA, V_GS = 0V (Figure 10)
V_GS = V_DS, I_D = -250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS
T_C =
= 0.8 x
125^oC
Rated
BV_DSS,
V_GS
=
0V
V_DS > I_D(ON) x r_{DS(ON) MAX}, V_GS = -10V
V_GS = ±20V
I_D = -3.5A, V_GS = -10V (Figures 8, 9)
V_DS > I_D(ON) x r_DS(ON)MAX, I_D = -3.5A
( Figure 12)
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
L_D
L_S
V_DD = 0.5 x Rated BV_DSS, I_D ≈ -6.0A,
R_G = 50Ω , R_L = 7.7Ω for V_DSS = 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V_GS = -10V, I_D = -6A, V_DS = 0.8 x Rated BV_DSS
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
V_DS = -25V, V_GS = 0V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw on Tab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L_D
G
L_S
S
R_θJC
R_θJA
Typical Socket Mount
MIN
-100
-2
-
-
TYP
-
-
-
-
MAX
-
-4
-25
-250
UNITS
V
V
µA
µA
-6
-
-
A
-
-
±100 nA
-
0.500 0.600
Ω
0.9
2
-
S
-
25
50
ns
-
50
100
ns
-
50
100
ns
-
50
100
ns
-
16
22
nC
-
9
-
nC
-
7
-
nC
-
300
-
pF
-
200
-
pF
-
50
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
3.12 ^oC/W
-
-
62.5 ^oC/W
4-4