IRF9510 Datasheet, PDF (3/7 Pages) Intersil Corporation – 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

IRF9510
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD
Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
I_{SDM Integral Reverse P-N}
(Note 3)
Junction Diode
G
MIN TYP
-
-
-
-
MAX
-3.0
-12
UNITS
A
A
S
Source to Drain Diode Voltage(Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V_SD
t_rr
Q_RR
T_C = 25^oC, I_SD = -3.0A, V_GS = 0V, (Figure 13)
T_J = 150^oC, I_SD = -3.0A, dI_SD/dt = 100A/µs
T_J = 150^oC, I_SD = -3.0A, dI_SD/dt = 100A/µs
-
-
-1.5
V
-
120
-
ns
-
6.0
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 25V, starting T_J = 25^oC, L = 31.7mH, R_G = 25Ω, peak I_AS = 3.0A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
-5
1.0
-4
0.8
-3
0.6
-2
0.4
-1
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10^-5
SINGLE PULSE
10^-4
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
5-5