IRF9510 Datasheet, PDF (2/7 Pages) Intersil Corporation – 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

IRF9510
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRF9510
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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. I_D
. I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-3.0
-2.0
-12
±20
20
0.16
V
V
A
A
A
V
W
W/^oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
190
-55 to 150
mJ
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
BV_DSS
V_GS(TH)
I_GSS
I_DSS
I_D(ON)
V_GS = 0V, I_D = -250µA, (Figure 10)
V_GS = V_DS, I_D = -250µA
V_GS = ±20V
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC
V_DS > I_{D(ON) x} r_DS(ON)MAX, V_GS = -10V,
(Figure 7)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
r_DS(ON)
g_fs
V_GS = -10V, I_D = -1.5A, (Figures 8, 9)
V_DS > I_D(ON) x r_DS(ON) Max, I_D = -1.5A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(ON)
t_r
t_d(OFF)
t_f
V_DD = 0.5 x Rated BV_DSS, I_D ≈ -3.0A,
R_G = 50Ω, V_GS = 10V, (Figures 17, 18)
R_L = 15.7Ω for V_{DSS =} 50V
R_L = 12.3Ω for V_DSS = 40V
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
L_D
V_GS = -10V, I_D = -3A, V_DS = 0.8 x Rated BV_DSS,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
V_GS = 0V, V_DS = -25V, f = 1.0MHz,
(Figure 11)
Measured From the
Contact Screw on Tab
to Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
L_D
Internal Source Inductance
L_S
Measured From The
G
Source Lead, 6mm
L_S
(0.25in) From Header to
Source Bonding Pad
S
Junction to Case
Junction to Ambient
R_θJC
R_θJA
Typical Socket Mount
MIN
-100
-2.0
-
-
-
-3.0
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-4.0
V
-
±100 nA
-
-25
µA
-
-250 µA
-
-
A
1.000 1.200 Ω
1.1
-
S
15
30
ns
30
60
ns
20
40
ns
20
40
ns
8.5
11
nC
3.8
-
nC
4.7
-
nC
180
-
pF
85
-
pF
30
-
pF
3.5
-
nH
4.5
-
nH
7.5
-
nH
-
6.4 ^oC/W
-
62.5 ^oC/W
5-4