DG444DYZ-T Datasheet, PDF (3/12 Pages) Intersil Corporation – Monolithic, Quad SPST, CMOS Analog Switches

DG444, DG445
Absolute Maximum Ratings
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
V_L. . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to (V+) + 0.3V
Digital Inputs, V_S, V_D (Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θ_JA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
Maximum Junction Temperature (Plastic Packages). . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on S_X, D_X, or IN_X exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, V_L = 5V, V_IN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP (NOTE 4) (NOTE 5) (NOTE 4)
(°C)
MIN
TYP
MAX
DYNAMIC CHARACTERISTICS
Turn-ON Time, t_ON
Turn-OFF Time, t_OFF
DG444
R_L = 1kΩ, C_L = 35pF, V_S = ±10V
(Figure 1)
+25
-
120
250
+25
-
110
140
DG445
+25
-
160
210
Charge Injection, Q (Figure 2)
OFF Isolation (Figure 4)
Crosstalk (Channel-to-Channel)
(Figure 3)
C_L = 1nF, V_G = 0V, R_G = 0Ω
R_L = 50Ω, C_L = 5pF, f = 1MHz
+25
-
-1
-
+25
-
60
-
+25
-
-100
-
Source OFF Capacitance, C_S(OFF)
Drain OFF Capacitance, C_D(OFF)
Channel ON Capacitance,
C_D(ON) + C_S(ON)
DIGITAL INPUT CHARACTERISTICS
f = 1MHz, V_ANALOG = 0 (Figure 5)
+25
-
4
-
+25
-
4
-
+25
-
16
-
Input Current V_IN Low, I_IL
V_IN Under Test = 0.8V,
All Others = 2.4V
Full
-0.5 -0.00001 0.5
Input Current V_IN High, I_IH
V_IN Under Test = 2.4V,
All Others = 0.8V
Full
-0.5
0.00001
0.5
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V_ANALOG
Drain-Source ON Resistance,
r_DS(ON)
I_S = 10mA, V_D = ±8.5V,
V+ = 13.5V, V- = -13.5V
Full
-15
-
15
+25
-
50
85
Full
-
-
100
Source OFF Leakage Current, I_S(OFF)
V+ = 16.5V, V- = -16.5V,
V_D = ±15.5V, V_S = 15.5V
+25
-0.5
0.01
0.5
+85
-5
-
5
UNITS
ns
ns
ns
pC
dB
dB
pF
pF
pF
μA
μA
V
Ω
Ω
nA
nA
3
FN3586.10
June 4, 2007