CD3086 Datasheet, PDF (3/5 Pages) Intersil Corporation – General Purpose NPN Transistor Array

CA3086
Electrical Specifications T_A = 25^oC, Typical Values Intended Only for Design Guidance (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
Low-Frequency, Small-Signal Equivalent-
Circuit Characteristics:
f = 1kHz,V_CE = 3V, I_C = 1mA
Forward Current-Transfer Ratio
h_FE
100
(Figure 6)
Short-Circuit Input Impedance
h_IE
3.5
(Figure 6)
Open-Circuit Output Impedance
h_OE
(Figure 6)
Open-Circuit Reverse-Voltage
h_RE
Transfer Ratio (Figure 6)
15.6
1.8 X 10^-4
Admittance Characteristics:
Forward Transfer Admittance
(Figure 7)
f = 1MHz,V_CE = 3V, l_C = 1mA
y_FE
31 - j1.5
Input Admittance (Figure 8)
y_IE
Output Admittance (Figure 9)
y_OE
Reverse Transfer Admittance
y_RE
(Figure 10)
0.3 + j0.04
0.001 + j0.03
See Figure 10
Gain-Bandwidth Product (Figure 11)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
f_T
C_EBO
C_CBO
C_ClO
V_CE = 3V, I_C = 3mA
V_EB = 3V, I_E = 0
V_CB = 3V, I_C = 0
V_{C l} = 3V, I_C = 0
550
0.6
0.58
2.8
Typical Performance Curves
UNITS
-
kΩ
µS
-
mS
mS
mS
-
MHz
pF
pF
pF
10²
I_E = 0
10
1
10^-1
V_CB = 15V
V_CB = 10V
V_CB = 5V
10^-2
10^-3
10^-4
0
25
50
75
100
125
TEMPERATURE (^oC)
FIGURE 1. I_CBO vs TEMPERATURE
10³ _{IB = 0}
10²
10
1
V_CE = 10V
V_CE = 5V
10^-1
10^-2
10^-3
0
25
50
75
100
125
TEMPERATURE (^oC)
FIGURE 2. I_CEO vs TEMPERATURE
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