CD3086 Datasheet, PDF (2/5 Pages) Intersil Corporation – General Purpose NPN Transistor Array

CA3086
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, V_CIO (Note 1) . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55^oC to 125^oC
Thermal Resistance (Typical, Note 2)
θ_JA (^oC/W) θ_JC (^oC/W)
CERDIP Package . . . . . . . . . . . . . . . . 150
75
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any one transistor). . . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages) . . . . . . . 175^oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150^oC
Maximum Storage Temperature Range . . . . . . . . . -65^oC to 150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300^oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2. θ_JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications T_A = 25^oC, For Equipment Design
PARAMETER
SYMBOL TEST CONDITIONS MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
V_(BR)CBO l_C = 10µA, I_E = 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V_(BR)CEO I_C = 1mA, I_B = 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V_(BR)ClO I_C = 10µA, I_CI = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V_(BR)EBO I_E = 10µA, I_C = 0
5
7
-
V
Collector-Cutoff Current (Figure 1)
I_CBO
V_CB = 10V, I_E = 0,
-
0.002
100
nA
Collector-Cutoff Current (Figure 2)
I_CEO
V_CE = 10V, I_B = 0,
-
(Figure 2)
5
µA
DC Forward-Current Transfer Ratio (Figure 3)
h_FE
V_CE = 3V, I_C = 1mA
40
100
-
Electrical Specifications T_A = 25^oC, Typical Values Intended Only for Design Guidance
PARAMETER
DC Forward-Current Transfer Ratio
(Figure 3)
Base-to-Emitter Voltage (Figure 4)
V_BE Temperature Coefficient (Figure 5)
Collector-to-Emitter
Saturation Voltage
Noise Figure (Low Frequency)
SYMBOL
h_FE
V_BE
∆V_BE/∆T
V_{CE SAT}
TEST CONDITIONS
V_CE = 3V
V_CE = 3V
V_CE = 3V, l_C = 1 mA
I_B = 1mA, I_C = 10mA
I_C = 10mA
I_C = 10µA
I_E = 1 mA
I_E = 10mA
NF
f = 1kHz, V_CE = 3V, I_C = 100µA,
R_S = 1kΩ
TYPICAL
VALUES
100
54
0.715
0.800
-1.9
0.23
3.25
UNITS
V
V
mV/^oC
V
dB
5-28