5962F9956004V9A Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH
Die Characteristics
DIE DIMENSIONS:
4890μm x 3370μm (193 mils x 133 mils)
Thickness: 483μm ± 25.4μm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10⁵ A/cm²
Transistor Count:
125
Metallization Mask Layout
HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH
GND (5)
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
OUT A (15)
OUT A (14)
V_CC (12)
V_CC (13)
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3
FN4739.2
September 24, 2013