5962F9956004V9A Datasheet, PDF (1/3 Pages) Intersil Corporation – Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

Radiation Hardened Dual, Non-Inverting Power MOSFET
Drivers
HS-4424RH, HS-4424EH,
HS-4424BRH, HS-4424BEH
The Radiation Hardened HS-4424RH, HS-4424EH,
HS-4424BRH and HS-4424BEH are non-inverting, dual,
monolithic high-speed MOSFET drivers designed to convert TTL
level signals into high current outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications.
The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4424RH, HS-4424EH and
7.5V for the HS-4424BRH, HS-4424BEH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Features
• Electrically screened to DESC SMD # 5962-99560
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Latch-up immune
- Low dose rate immune
• I_PEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (min)
• Matched rise and fall times (C_L = 4300pF) . . . . . . 75ns (max)
• Low voltage lock-out feature
- HS-4424RH, HS-4424EH. . . . . . . . . . . . . . . . . . . . . . < 10.0V
- HS-4424BRH, HS-4424BEH . . . . . . . . . . . . . . . . . . . . < 7.5V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V
• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (max)
• Consistent delay times with V_CC changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V
Applications
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99560.
• Switching power supplies
• DC/DC converters
• Motor controllers
Pin Configuration
HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH
(FLATPACK CDFP4-F16)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
NC
OUT A
OUT A
V_CC
V_CC
OUT B
OUT B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their
same electrical points on the die.
September 24, 2013
1
FN4739.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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