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ISL6565A Datasheet, PDF (24/28 Pages) Intersil Corporation – Multi-Phase PWM Controller with Precision rDS(ON) or DCR Current Sensing for VR10.X Application
ISL6565A, ISL6565B
have sufficiently low ESL and ESR so that the total output-
voltage deviation is less than the allowable maximum.
Neglecting the contribution of inductor current and regulator
response, the output voltage initially deviates by an amount
∆V ≈ (ESL) -d---i + (ESR) ∆I
dt
(EQ. 41)
The filter capacitor must have sufficiently low ESL and ESR
so that ∆V < ∆VMAX.
Most capacitor solutions rely on a mixture of high-frequency
capacitors with relatively low capacitance in combination
with bulk capacitors having high capacitance but limited
high-frequency performance. Minimizing the ESL of the
high-frequency capacitors allows them to support the output
voltage as the current increases. Minimizing the ESR of the
bulk capacitors allows them to supply the increased current
with less output voltage deviation.
The ESR of the bulk capacitors also creates the majority of
the output-voltage ripple. As the bulk capacitors sink and
source the inductor ac ripple current (see Interleaving and
Equation 2), a voltage develops across the bulk-capacitor
ESR equal to IC,PP (ESR). Thus, once the output capacitors
are selected, the maximum allowable ripple voltage,
VPP(MAX), determines the lower limit on the inductance.
L
≥
(ESR)


VI
N
–
N
VO
U

T
VO
U
T
-----------------------------------------------------------
f S V I N V P P( M A X )
(EQ. 42)
Since the capacitors are supplying a decreasing portion of
the load current while the regulator recovers from the
transient, the capacitor voltage becomes slightly depleted.
The output inductors must be capable of assuming the entire
load current before the output voltage decreases more than
∆VMAX. This places an upper limit on inductance.
Equation 43 gives the upper limit on L for the cases when
the trailing edge of the current transient causes a greater
output-voltage deviation than the leading edge. Equation 44
addresses the leading edge. Normally, the trailing edge
dictates the selection of L because duty cycles are usually
less than 50%. Nevertheless, both inequalities should be
evaluated, and L should be selected based on the lower of
the two results. In each equation, L is the per-channel
inductance, C is the total output capacitance, and N is the
number of active channels.
L ≤ -2---N-----C-----V----O---
(∆I)2
∆VMAX – ∆I(ESR)
(EQ. 43)
L ≤ (---1---.--2---5----)---N----C---
(∆I)2
∆VMAX – ∆I(ESR)
VIN – VO
(EQ. 44)
Input Supply Voltage Selection
The VCC input of the ISL6565 can be connected either
directly to a +5V supply or through a current limiting resistor to
a +12V supply. An integrated 5.8V shunt regulator maintains
the voltage on the VCC pin when a +12V supply is used. A
300Ω resistor is suggested for limiting the current into the
VCC pin to a worst-case maximum of approximately 25mA.
Switching Frequency
There are a number of variables to consider when choosing
the switching frequency, as there are considerable effects on
the upper-MOSFET loss calculation. These effects are
outlined in MOSFETs, and they establish the upper limit for
the switching frequency. The lower limit is established by the
requirement for fast transient response and small output-
voltage ripple as outlined in Output Filter Design. Choose the
lowest switching frequency that allows the regulator to meet
the transient-response requirements.
Switching frequency is determined by the selection of the
frequency-setting resistor, RT (see the figures labeled
Typical Application on pages 5 and 6). Figure 18 and
Equation 45 are provided to assist in selecting the correct
value for RT.
RT = 10[10.7 – 1.045log(fS)]
(EQ. 45)
1000
100
10
10
100
1000
SWITCHING FREQUENCY (kHz)
10000
FIGURE 18. RT vs SWITCHING FREQUENCY
Input Capacitor Selection
The input capacitors are responsible for sourcing the ac
component of the input current flowing into the upper
MOSFETs. Their RMS current capacity must be sufficient to
handle the ac component of the current drawn by the upper
MOSFETs which is related to duty cycle and the number of
active phases.
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