RHR1K160D Datasheet, PDF (2/9 Pages) Intersil Corporation – 1A, 600V Hyperfast Dual Diode

RHR1K160D
Electrical Specifications (Per Leg) T_A = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V_F
I_R
t_rr
t_a
t_b
Q_RR
C_J
R_θJA
I_F = 1A
I_F = 1A, T_A = 150^oC
V_R = 600V
V_R = 600V, T_A = 150^oC
I_F = 1A, dI_F/dt = 200A/µs
I_F = 1A, dI_F/dt = 200A/µs
I_F = 1A, dI_F/dt = 200A/µs
I_F = 1A, dI_F/dt = 200A/µs
V_R = 10V, I_F = 0A
Pad Area = 0.483 in² (Note 1)
Pad Area = 0.027 in² (Note 2) (Figure 13)
Pad Area = 0.006 in² (Note 2) (Figure 13)
-
-
2.1
V
-
-
1.7
V
-
-
100
µA
-
-
500
µA
-
-
25
ns
-
10.5
-
ns
-
5
-
ns
-
20
-
nC
-
10
-
pf
-
-
50
o_C/W
-
-
201
o_C/W
-
-
239
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I_R = Instantaneous reverse current.
t_rr = Reverse recovery time (See Figure 10), summation of t_a + t_b.
t_a = Time to reach peak reverse current (See Figure 10).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 10).
Q_rr = Reverse recovery charge.
C_J = Junction Capacitance.
R_θJA = Thermal resistance junction to ambient.
pw = Pulse width.
D = Duty cycle.
NOTES:
1. Measured using FR-4 copper board at 0.8 seconds.
2. 2. Measured using FR-4 copper board at 1000 seconds.
Typical Performance Curve
10
100^oC
150^oC
25^oC
1
10
150^oC
1
100^oC
0.1
0.1
0 0.5
1
1.5
2
2.5
3
3.5
4
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
0.01
25^oC
0.001
0
100
200
300
400
500 600
V_R, REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2