RFT2P03L Datasheet, PDF (2/9 Pages) Intersil Corporation – 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

RFT2P03L
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
-30
V
-30
V
±20V
V
Continuous (Note 2) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
2.1
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Figure 5
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Figures 6, 14, 15
Power Dissipation (Note 2)
Derate Above 25^oC . . . .
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P_D
...
1.1
0.009
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_A = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
BV_DSS
V_GS(TH)
I_D = 250µA, V_GS = 0V (Figure 11)
V_GS = V_DS, I_D = 250µA (Figure 10)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(-10)
Q_g(TH)
V_DS = -30V, V_GS = 0V
V_DS = -30V, V_GS = 0V, T_A = 150^oC
V_GS = ±20V
I_D = 2.1A, V_GS = -10V (Figure 9)
I_D = 2.1A, V_GS = -4.5V (Figure 9)
V_DD = -15V, I_D ≅ 2.1A,
R_L = 7.1Ω, V_GS = −10V,
R_GS = 21Ω
V_GS = 0V to -20V
V_GS = 0V to -10V
V_GS = 0V to -2V
V_DD = -15V, I_D ≅ 2.1A,
R_L = 7.1Ω
I_g(REF) = -1.0mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
C_ISS
C_OSS
C_RSS
R_θJA
V_DS = -25V, V_GS = 0V,
f = 1MHz
(Figure 12)
Pad Area = 0.171 in² (See note 2)
Pad Area = 0.068 in² (See Tech Brief 377)
Pad Area = 0.026 in² (See Tech Brief 377)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
V_SD
I_SD = -2.1A
Reverse Recovery Time
t_rr
I_SD = -2.1A, dI_SD/dt = 100A/µs
Reverse Recovered Charge
Q_RR
I_SD = -2.1A, dI_SD/dt = 100A/µs
NOTE:
2. 110^oC/W measured using FR-4 board with 0.171 in² footprint for 1000 seconds.
MIN TYP MAX UNITS
-30
-
-
V
-1
-
-3
V
-
-
-1
µA
-
-
-50
µA
-
-
±100
nA
-
0.120 0.150
Ω
-
0.300 0.360
Ω
-
-
50
ns
-
13
-
ns
-
18
-
ns
-
43
-
ns
-
24
-
ns
-
-
100
ns
-
27
33
nC
-
14
17
nC
-
1.3
1.6
nC
-
620
-
pF
-
240
-
pF
-
30
-
pF
-
-
110 ^oC/W
-
-
128 ^oC/W
-
-
147 ^oC/W
MIN TYP MAX UNITS
-
- -1.25
V
-
-
49
ns
-
-
45
nC
7-7-20