RFP8P10 Datasheet, PDF (2/5 Pages) Intersil Corporation – 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET

RFP8P10
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFP8P10
-100
-100
8
20
±20
75
0.6
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
BV_DSS I_D = -250µA, V_GS = 0
-100
V
V_GS(TH) V_GS = V_DS, I_D = -250µA
-2
-
-4
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
-
1
µA
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V T_J = 125^oC -
-
25
µA
I_GSS V_GS = ±20V, V_DS = 0
-
-
±100
nA
r_DS(ON) I_D = 8A, V_GS = -10V (Figures 6, 7)
-
- 0.400
Ω
V_DS(ON) I_D = 8A, V_GS = -10V
-
-
3.2
V
t_d(ON)
t_r
I_D ≈ 4A, V_DD = 50V, R_G = 50Ω, V_GS = -10V
R_L = 12Ω,
(Figure 10)
-
18
60
ns
-
70 150
ns
t_d(OFF)
- 166 275
ns
t_f
-
94 175
ns
C_ISS
C_OSS
V_GS = 0V, V_DS = 25V, f = 1MHz
(Figure 9)
-
-
1500
pF
-
-
700
pF
C_RSS
R_θJC
RFP8P10
-
-
300
pF
-
-
1.67 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -4A
Diode Reverse Recovery Time
t_rr
I_SD = -4A, dl_SD/dt = -100A/µs
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
-1.4
V
-
200
-
ns
4-166