RFP8P10 Datasheet, PDF (1/5 Pages) Intersil Corporation – 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET

Data Sheet
RFP8P10
July 1999
File Number 1496.2
8A, 100V, 0.400 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P10
TO-220AB
RFP8P10
NOTE: When ordering, include the entire part number.
Features
• 8A, 100V
• r_DS(ON) = 0.400Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-165
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.