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| RFP8N20L Datasheet, PDF (2/5 Pages) Intersil Corporation – 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET | |||
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RFP8N20L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP8N20L
200
200
8
20
10
60
0.48
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
ID = 250µA, VGS = 0
VGS = VDS, ID = 250µA
VDS = 0.8 x Rated BVDSS
VDS = 0.8 x Rated BVDSS
TC = 25oC
TC = 125oC
VGS = 10V, VDS = 0
ID = 8A, VGS = 5V
ID = 4A, VGS = 5V
ID = 4A, VDD = 50V, RG = 6.25 , VGS = 5V
VGS = 0V, VDS = 25V, f = 1MHz
RFP8N20L
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 4A
Diode Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
200
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
4.8
V
-
-
0.600
â¦
-
15
45
ns
-
45 150
ns
-
100 135
ns
-
60 105
ns
-
-
900
pF
-
-
250
pF
-
-
120
pF
2.083 oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
250
-
ns
6-279
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