RFP8N20L Datasheet, PDF (1/5 Pages) Intersil Corporation – 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

Data Sheet
RFP8N20L
July 1999 File Number 1514.3
8A, 200V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is specifically designed for use with logic
level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09534.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8N20L
TO-220AB
RFP8N20L
NOTE: When ordering, include the entire part number.
Features
• 8A, 200V
• r_DS(ON) = 0.600Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-278
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999