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RFP25N05L Datasheet, PDF (2/6 Pages) Intersil Corporation – 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
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RFP25N05L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N05L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
50
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
25
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
65
A
Single Pulse Avalanche Energy Rating (See Figures 4, 15, and 16). . . . . . . . . . . . . . . . . . . . . .
Refer to UIS SOA Curve
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
60
Linear Derating Factor above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.48
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IGSS
IDSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(5)
Qg(TH)
RθJC
RθJA
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA (Figure 9)
VGS = ±10V, VDS = 0V
VDS = 40V, VGS = 0V
TC = 150oC
VGS = 5V, ID = 25A (Figures 7, 8)
VGS = 4V, ID = 25A
VDD = 25V, ID =12.5A
RL = 2Ω, RGS = 5Ω
(Figures 15, 16)
VGS = 0 - 10V
VGS = 0 - 5V
VGS = 0 - 1V
VDD = 40V, ID = 25A,
RL = 1.6Ω
(Figures 17, 18)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 25A
Diode Reverse Recovery Time
trr
ISD = 25A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature.
MIN TYP MAX UNITS
50
-
-
V
1.0
-
2.0
V
-
-
±100
nA
-
-
1.0
µA
-
-
50
µA
-
-
0.047
Ω
-
-
0.056
Ω
-
-
60
ns
-
15
-
ns
-
35
-
ns
-
40
-
ns
-
14
-
ns
-
-
100
ns
-
-
80
nC
-
-
45
nC
-
-
3.0
nC
-
-
2.083 oC/W
-
-
80
oC/W
MIN TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
6-244
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