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RFP25N05L Datasheet, PDF (1/6 Pages) Intersil Corporation – 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
Data Sheet
RFP25N05L
July 1999 File Number 2270.3
25A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N05L
TO-220AB
RFP25N05L
NOTE: When ordering, include the entire part number.
Features
• 25A, 50V
• rDS(ON) = 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-243
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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