RFM6N45 Datasheet, PDF (2/4 Pages) Intersil Corporation – 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

RFM6N45, RFP6N45, RFP6N50
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM6N45 RFP6N45 RFP6N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T_pkg
450
450
6
15
±20
100
0.8
-55 to 150
300
260
450
450
6
15
±20
75
0.6
-55 to 150
300
260
500
500
6
15
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM6N45, RFP6N45
BV_DSS I_D = 250µA, V_GS = 0V
MIN TYP MAX UNITS
450
-
-
V
RFP6N50
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance(Note 2 )
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
V_DS(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
500
V_GS = V_DS, I_D = 250µA (Figure 8) 2
V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS
V_GS
=
=
0.8
0V,
xT_CRa=te1d25B_oVC_DSS,
-
V_GS = ±20V, V_DS = 0V
-
I_D = 6A, V_GS = 10V, (Figures 6, 7) -
I_D = 6A, V_GS = 10V
-
I_D = 3A, V_DD = 250V, R_G = 50Ω,
-
V_GS = 10V, R_L = 81Ω
(Figures 10, 11, 12)
-
-
-
V_GS = 0V, V_DS = 25V
-
f = 1MHz, (Figure 9)
-
-
RFM6N45
-
RFP6N45, RFP6N50
-
-
V
-
4
V
-
1
µA
-
25
µA
- ±100 nA
- 1.250 Ω
-
7.50
V
15
45
ns
40
80
ns
190 300
ns
60 100
ns
- 1500 pF
-
250
pF
-
200
pF
-
1.25 ^oC/W
1.67 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 3A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
800
-
ns
5-2