RFM6N45 Datasheet, PDF (1/4 Pages) Intersil Corporation – 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

Semiconductor
September 1998
RFM6N45, RFP6N45,
RFP6N50
6A, 450V and 500V, 1.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
Features
• 6A, 450V and 500V
• r_DS(ON) = 1.250Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM6N45
TO-204AA
RFM6N45
RFP6N45
TO-204AA
RFP6N45
RFP6N50
TO-220AB
RFP6N50
NOTE: When ordering, include the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for appli-
cations such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipo-
lar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from inte-
grated circuits.
Formerly developmental type TA17425.
Symbol
D
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5--1
File Number 1494.2