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| RFL1N12L Datasheet, PDF (2/4 Pages) Intersil Corporation – 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs | |||
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RFL1N12L, RFL1N15L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFL1N12L
RFL1N15L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1Mâ¦) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
120
120
1
5
±10
8.33
0.0667
-55 to 150
260
150
150
1
5
±10
8.33
0.0667
-55 to 150
260
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0
RFL1N12L
120
RFL1N15L
150
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
1
IDSS
VDS = Rated BVDSS
-
VDS = 0.8 x Rated BVDSS, TC = 125oC
-
IGSS
VGS = ±10V, VDS = 0
-
rDS(ON) ID = 1A, VGS = 5V, (Figures 6, 7)
-
VDS(ON) ID = 1A, VGS = 5V
-
td(ON)
ID â 1A, VDD = 75V, RG = 6.25â¦,
-
tr
RL = 75â¦, VGS = 5V,
(Figures 10, 11, 12)
-
td(OFF)
-
tf
-
CISS
VGS = 0V, VDS = 25V, f = 1MHz,(Figure 9) -
COSS
-
CRSS
-
RθJC
-
Source to Drain Diode Speciï¬cations
TYP MAX UNITS
-
-
V
-
-
V
-
2
V
-
1
µA
-
25
µA
- ±100 µA
- 1.900 â¦
-
1.9
V
10 25
ns
10 45
ns
24 45
ns
30 50
ns
-
200 pF
-
80
pF
-
35
pF
-
15 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr
ISD = 1A, dISD/dt = 50A/µs
NOTES:
2. Pulse test: width ⤠300µs duty cycle ⤠2%.
3. Repetitive rating: pulse witdh limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
7-2
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