RFL1N12L Datasheet, PDF(1/4 Page) Intersil Corporation – 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs

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RFL1N12L Datasheet, PDF (1/4 Pages) Intersil Corporation – 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs

Semiconductor

September 1998

RFL1N12L,

RFL1N15L

1A, 120V and 150V, 1.900 Ohm,

Logic Level, N-Channel Power MOSFETs

[ /Title

(RFL1N

12L,

RFL1N1

5L)

/Subject

(1A,

120V

and

150V,

1.900

Ohm,

Logic

Level,

N-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor,

Logic

Level,

N-Chan-

nel

Power

MOS-

FETs,

TO-

205AF)

Features

â¢ 1A, 120V and 150V

â¢ rDS(ON) = 1.900â¦

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N12L

TO-205AF

RFL1N12L

RFL1N15L

TO-205AF

RFL1N15L

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power ï¬eld effect transistors speciï¬cally designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching, and sole-

noid drivers. This performance is accomplished through a

special gate oxide design which provides full rated conduc-

tion at gate biases in the 3V to 5V range, thereby facilitating

true on-off power control directly from logic circuit supply

voltages.

Formerly developmental type TA09528.

Symbol

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

7-1

File Number 1513.2

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