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| RFH10N45 Datasheet, PDF (2/4 Pages) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs | |||
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RFH10N45, RFH10N50S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFH10N45
RFH10N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
450
500
V
Drain to Gate Voltage (RGS = 1Mâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
10
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
150
W
1.2
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
300
300
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
260
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
Drain to Source Breakdown Voltage
RFH10N45
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
RFH10N50
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V (Figures 6, 7)
ID â 5A, VDS = 250V, RG = 50â¦,
RL = 50â¦, VGS = 10V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V
f = 1MHz (Figure 9)
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 10A
Diode Reverse Recovery Time
trr
ISD = 10A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
450
V
500
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
6.0
V
-
-
0.600
â¦
-
26
60
ns
-
50
100
ns
-
525 900
ns
-
105 180
ns
-
-
3000 pF
-
-
600
pF
-
-
200
pF
-
-
0.83 oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
950
-
ns
2
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