RFH10N45 Datasheet, PDF (1/4 Pages) Intersil Corporation – 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Semiconductor
Data Sheet
RFH10N45, RFH10N50
October 1998 File Number 1629.2
10A, 450V and 500V, 0.600 Ohm,
Features
N-Channel Power MOSFETs
[ /Title _{These are N-Channel enhancement mode silicon gate}
(RFH10 power field effect transistors designed for applications such
N45,
as switching regulators, switching converters, motor drivers,
RFH10N ^{relay drivers, and drivers for high power bipolar switching}
50)
transistors requiring high speed and low gate drive power.
/Subject ^{These types can be operated directly from integrated circuits.}
(10A, ^{Formerly developmental type TA17435.}
450V _{Ordering Information}
and
500V,
PART NUMBER
PACKAGE
BRAND
0.600
RFH10N45
TO-218AC
RFH10N45
Ohm,
RFH10N50
TO-218AC
RFH10N50
N-Chan- ^{NOTE: When ordering, include the entire part number.}
• 10A, 450V and 500V
• r_DS(ON) = 0.600Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
nel
Power _Packaging
MOS-
FETs)
JEDEC TO-218AC
/Author
()
/Key-
SOURCE
DRAIN
GATE
words
(Harris
Semi-
conduc-
tor,
N-Chan-
DRAIN
(FLANGE)
nel
Power
MOS-
FETs,
TO-
218AC)
/Creator
()
/DOCIN
FO pdf-
mark
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998