RFG60P06E Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

RFG60P06E
Absolute Maximum Ratings T_C = 25^oC
RFG60P06E
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
-60
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
-60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
60
A
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Refer to Peak Current Curve
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Refer to UIS Curve
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_SD
2
KV
MIL-STD-883, Category B(2)
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
215
1.43
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications
PARAMETER
T_C = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate To Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(-10)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = -60V,
V_GS = 0V
T_C = 25^oC
T_C = 150^oC
V_GS = ±20V
I_D = 60A, V_GS = -10V
V_DD = -30V, I_D = 30A,
R_L = 1.0Ω, V_GS = -10V,
R_GS = 2.5Ω
V_GS = 0 to -20V
V_GS = 0 to -10V
V_GS = 0 to -2V
V_DD = -48V,
I_D = 60A,
R_L = 0.8Ω
V_DS = -25V, V_GS = 0V,
f = 1MHz
-60
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-50
µA
-
-
100
nA
-
-
0.030
W
-
-
125
ns
-
20
-
ns
-
60
-
ns
-
65
-
ns
-
20
-
ns
-
-
125
ns
-
-
450
nC
-
-
225
nC
-
-
15
nC
-
7200
-
pF
-
1700
-
pF
-
325
-
pF
-
-
0.70
o_C/W
-
-
80
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
V_SD
I_SD = 45A
t_rr
I_SD = 45A, dI_SD/dt = 100A/µs
-
-
1.5
-
-
125
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-155