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| RFG60P06E Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET | |||
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Data Sheet
RFG60P06E
July 1999 File Number 3989.3
60A, 60V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
The RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P06E
TO-247
RFG60P06E
NOTE: When ordering use the entire part numberr RFG60P06E.
Features
⢠60A, 60V
⢠rDS(ON) = 0.030â¦
⢠Temperature Compensating PSPICE® Model
⢠2kV ESD Rated
⢠Peak Current vs Pulse Width Curve
⢠UIS Rating Curve
⢠175oC Operating Temperature
⢠Related Literature
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
4-154
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
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