RFG40N10LE Datasheet, PDF (2/8 Pages) Intersil Corporation – 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

RFG40N10LE, RFP40N10LE, RF1S40N10LESM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFG40N10LE, RFP40N10LE,
RF1S40N10LESM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation (Figure
Derate Above 25^oC . . .
1)
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
100
100
±10
40
Refer to Peak Current Curve
Refer to UIS Curve
150
1.00
-55 to 175
300
260
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(5)
Q_g(TH)
I_D = 250µA, V_GS = 0V (Figure 13)
V_GS = V_DS, I_D = 250µA (Figure 12)
V_DS = 95V, V_GS = 0V
V_DS = 90V, V_GS = 0V, T_C = 150^oC
V_GS = ±10V
I_D = 40A, V_GS = 5V
V_DD = 50V, I_D = 40A, R_L = 1.25Ω,
V_GS = 5V, R_GS = 2.5Ω
(Figures 10, 18, 19)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 80V,
I_D = 40A,
R_L = 2.0Ω
(Figures 20, 21)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
V_DS = 25V, V_GS = 0V,
f = 1MHz
(Figure 14)
All Packages
TO-247
TO-220AB and TO-263AB
MIN
TYP
100
-
1
-
-
-
-
-
-
-
-
-
-
-
-
22
-
140
-
70
-
65
-
-
-
145
-
85
-
3
-
3000
-
500
-
200
-
-
-
-
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Source to Drain Diode Voltage
V_SD
I_SD = 40A
-
-
Diode Reverse Recovery Time
t_rr
I_SD = 40A, dI_SD/dt = 100A/µs
-
-
NOTES:
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
-
3
1
250
10
0.040
200
-
-
-
-
165
180
105
4
-
-
-
1.0
30
80
MAX
1.5
205
UNITS
V
V
µA
µA
µA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
o_C/W
UNITS
V
ns
2