RFG30P05 Datasheet, PDF (2/8 Pages) Intersil Corporation – 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs

RFG30P05, RFP30P05, RF1S30P05SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFG30P05, RFP30P05
RF1S30P05SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-50
-50
±20
30
Refer to Peak Current Curve
120
0.8
V
V
V
A
W
W/^oC
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Refer to UIS Curve
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
t_(OFF)
Q_g(TOT)
Q_g(-10)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, T_C = 150^oC
V_GS = ±20V
I_D = 30A, V_GS = -10V (Figure 9)
V_DD = -25V, I_D = 15A,
R_L = 1.67Ω, V_GS = -10V,
R_G = 6.25Ω
(Figure 13)
V_GS = 0 to -20V
V_GS = 0 to -10V
V_GS = 0 to -2V
V_DD = -40V,
I_D = 30A, R_L = 1.33Ω,
I_G(REF) = 1.6mA
V_DS = -25V, V_GS = 0V
f = 1MHz
(Figure 12)
TO-220, TO-263
TO-247
MIN TYP MAX UNITS
-50
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-25
µA
-
-
±100 nA
-
-
0.065
Ω
-
-
80
ns
-
15
-
ns
-
23
-
ns
-
28
-
ns
-
18
-
ns
-
-
100
ns
-
140 170
nC
-
70
85
nC
-
5.5
6.6
nC
-
3200
-
pF
-
800
-
pF
-
175
-
pF
-
-
1.25 ^oC/W
-
-
62
o_C/W
-
-
30
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -30A
-
-
-1.5
Reverse Recovery Time
t_rr
I_SD = -30A, dI_SD/dt = -100A/µs
-
-
150
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-127