RFG30P05 Datasheet, PDF (1/8 Pages) Intersil Corporation – 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs

RFG30P05, RFP30P05, RF1S30P05SM
Data Sheet
July 1999 File Number 2436.4
30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P05
TO-247
RFG30P05
RFP30P05
TO-220AB
RFP30P05
RF1S30P05SM
TO-263AB
F1S30P05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 30A, 50V
• r_DS(ON) = 0.065Ω
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-126
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999