RFD3055LE Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

RFD3055LE, RFD3055LESM, RFP3055LE
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD3055LE, RFD3055LESM,
RFP3055LE
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
60
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
±16
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
11
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Refer to Peak Current Curve
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
38
0.25
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(5)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = 55V, V_GS = 0V
V_DS = 50V, V_GS = 0V, T_C = 150^oC
V_GS = ±16V
I_D = 8A, V_GS = 5V (Figure 11)
V_DD ≈ 30V, I_D = 8A,
V_GS = 4.5V, R_GS = 32Ω
(Figures 10, 18, 19)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 30V, I_D = 8A,
I_g(REF) = 1.0mA
(Figures 20, 21)
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 14)
TO-220AB
TO-251AA, TO-252AA
MIN TYP MAX UNITS
60
-
-
V
1
-
3
V
-
-
1
µA
-
-
250
µA
-
- ±100 nA
-
- 0.107 Ω
-
-
170
ns
-
8
-
ns
- 105
-
ns
-
22
-
ns
-
39
-
ns
-
-
92
ns
-
9.4 11.3
nC
-
5.2 6.2
nC
- 0.36 0.43 nC
- 350
-
pF
- 105
-
pF
-
23
-
pF
-
-
3.94 ^oC/W
-
-
62 ^oC/W
-
-
100 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
V_SD
I_SD = 8A
- 1.25
V
Diode Reverse Recovery Time
t_rr
I_SD = 8A, dI_SD/dt = 100A/µs
-
66
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
6-2