RFD3055LE Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet
November 1999 File Number 4044.3
11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3055LE
TO-251AA
F3055L
RFD3055LESM
TO-252AA
F3055L
RFP3055LE
TO-220AB
FP3055LE
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 11A, 60V
• r_DS(ON) = 0.107Ω
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
6-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
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