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RFD10P03L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
◁
RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specifie
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
(0.063in (1.6mm) from case for 10s)
RFD10P03L, RFD10P03LSM,
RFP10P03L
-30
-30
±10
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BVDSS
VGS(TH)
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 12)
VDS = -30V,
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±10V
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
ID = 10A, VGS = -5V (Figures 9, 10)
ID = 10A, VGS = -4.5V (Figures 9, 10)
VDD = 15V, ID ≅ 10A, RL = 1.5Ω,
RGS = 5Ω, VGS = -5V
(Figure 13)
VGS = 0 to -10V
VGS = 0 to -5V
VGS = 0 to -1V
VDD = -24V, ID ≅ 10A,
RL = 2.4Ω
Ig(REF) = -0.25mA
(Figure 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 15)
RFD10P03L, RFD10P03LSM
RFP10P03L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Forward Voltage
VSD
Reverse Recovery Time
trr
NOTE:
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
TEST CONDITIONS
ISD = -10A
ISD = -10A, dISD/dt = -100A/µs
MIN
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
15
50
35
20
-
25
13
1.2
1035
340
35
-
-
MAX
-
-2
-1
-50
±100
0.200
0.220
100
-
-
-
-
80
30
16
1.5
-
-
-
2.30
100
80
UNITS
V
V
µA
µA
nA
Ω
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
TYP MAX UNITS
-
-1.5
V
-
75
ns
7-4
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