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JANSR2N7281 Datasheet, PDF (2/7 Pages) Intersil Corporation – Radiation Hardened, N-Channel Power MOSFET | |||
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JANSR2N7281
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kâ¦) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JANSR2N7281
500
500
2
1
6
±20
25
10
0.20
6
2
6
-55 to 150
300
1.0
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
Electrical Speciï¬cations
TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (10)
Qg (TH)
Qgs
Qgd
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 400V,
VGS = 0V
VGS = ±20V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 10V, ID = 2A
ID = 1A,
VGS = 10V
TC = 25oC
TC = 125oC
VDD = 250V, ID = 2A,
RL = 125â¦, VGS = 10V,
RGS =25â¦
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 250V,
ID = 2A,
RL = 125â¦
MIN
TYP
MAX UNITS
500
-
-
V
-
-
5.0
V
2.0
-
4.0
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
200
nA
5.25
V
-
-
2.50
â¦
-
-
6.50
â¦
-
-
46
ns
-
-
58
ns
-
-
208
ns
-
-
54
ns
-
-
130
nC
-
-
64
nC
-
-
4
nC
-
-
12
nC
-
-
32
nC
-
-
5.0
oC/W
-
-
175
oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 2A
ISD = 2A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
900
ns
4-2
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