JANSR2N7281 Datasheet, PDF (1/7 Pages) Intersil Corporation – Radiation Hardened, N-Channel Power MOSFET

Formerly FRL430R4
Data Sheet
JANSR2N7281
November 1998
File Number 4294
Radiation Hardened, N-Channel
Power MOSFET
The Intersil has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-
Channel and P-Channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to exhibit
minimal characteristic changes to total dose (GAMMA) and
neutron (n^o) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: www.semi.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7281
TO-205AF
BRAND
JANSR2N7281
Die family TA17635.
MIL-PRF-19500/604.
Features
• 2A, 500V, r_DS(ON) = 2.50Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 8nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E12
Neutrons/cm²
- Usable to 3E13 Neutrons/cm²
Symbol
D
G
S
Package
TO-205AF
DG S
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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