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| HIP2060 Datasheet, PDF (2/8 Pages) Intersil Corporation – 60V, 10A Half Bridge Power MOSFET Array | |||
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HIP2060
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . VDS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISD
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . IDM
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .IDS
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Continuous Power Dissipation at TC = 25oC (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . PD
Continuous Power Dissipation, Derate above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θJA
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . VD1S2
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. VDD = 25V, Start TJ = 25oC, L = 1.5mH, RGS = 50â¦, R = 0. See Figures 2, 12, and 13.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain1-Source2 Breakdown Voltage
(Across D1)
Zero Gate Voltage Drain Current
Drain1-Source2 Current (Through D1)
Drain-Source On-State Voltage
(Note 4)
Forward Gate Current, Drain Short
Circuited to Source
SYMBOL
BVDSS
VGS(TH)
BVD1S2
IDSS
ID1S2
VDS(ON)
IGSSF
TEST CONDITIONS
ID = 100µA, VGS = 0V
TC = -40oC to
125oC
TC = 25oC
VGS = VDS, ID = 250µA
ID1S2 = 1µA,
VG1S1, VG2S2 = 0V
TC = 25oC
VDS = 60V
VGS = 0V
TC = 25oC
VD1S2 = 60V
TC = 25oC
VG1S1 = 0V, VG2S2 = 0V TC = 125oC
ID = 10A, VGS = 15V
ID = 10A, VGS = 10V
VDS = 0V, VGS = 20V
Reverse Gate Current, Drain Short
Circuited to Source
Drain-Source On Resistance (Note 4)
Forward Transconductance (Note 4)
IGSSR VDS = 0V, VGS = -20V
rDS(ON)
gfs
VGS = 15V, ID = 10A
VGS = 15V, ID = 10A
VGS = 10V, ID = 10A
VGS = 10V, ID = 10A
VDS = 15V, ID = 5A
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
HIP2060
60
60
±20
10
25
10
100
46
0.37
60
-40 to 125
-40 to 150
300
60
UNITS
V
V
V
A
A
A
mJ
W
W/oC
oC/W
oC
oC
oC
V
MIN TYP MAX UNITS
60
-
-
V
-
70
-
V
1.5
2.3
2.7
V
-
105
-
V
-
-
1
µA
-
0.3
1
µA
-
1
-
µA
-
0.9
1.25
V
-
1.1
1.5
V
-
-
100
nA
-
-
-100
nA
-
0.09 0.135
â¦
-
0.15 0.21
â¦
-
0.11 0.15
â¦
-
0.19 0.25
â¦
-
4.5
-
S
2
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