CD40104BMS Datasheet, PDF (2/10 Pages) Intersil Corporation – CMOS 4-Bit Bidirectional Universal Shift Register

Specifications CD40104BMS, CD40194BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For T_A = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For T_A = +100^oC to +125^oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T_A = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Input Leakage Current
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
IDD VDD = 20V, VIN = VDD or GND
1
2
VDD = 18V, VIN = VDD or GND
3
IIL VIN = VDD or GND VDD = 20V
1
2
TEMPERATURE
+25^oC
+125^oC
-55^oC
+25^oC
+125^oC
LIMITS
MIN MAX UNITS
-
10 µA
- 1000 µA
-
10 µA
-100
-
nA
-1000 -
nA
Input Leakage Current
VDD = 18V
IIH VIN = VDD or GND VDD = 20V
Output Voltage
VDD = 18V
VOL15 VDD = 15V, No Load
3
1
2
3
1, 2, 3
-55^oC
-100
-
nA
+25^oC
-
100 nA
+125^oC
- 1000 nA
-55^oC
-
100 nA
+25^oC, +125^oC, -55^oC -
50 mV
Output Voltage
Output Current (Sink)
Output Current (Sink)
VOH15
IOL5
IOL10
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
1, 2, 3
+25^oC, +125^oC, -55^oC 14.95
-
V
1
+25^oC
0.53
-
mA
1
+25^oC
1.4
-
mA
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL15
IOH5A
IOH5B
IOH10
IOH15
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
1
+25^oC
3.5
-
mA
1
+25^oC
- -0.53 mA
1
+25^oC
-
-1.8 mA
1
+25^oC
-
-1.4 mA
1
+25^oC
-
-3.5 mA
N Threshold Voltage
P Threshold Voltage
Functional
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Tri-State Output
Leakage
Tri-State Output
Leakage
VNTH
VPTH
F
VIL
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V
VIL
VIH
IOZL
IOZH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIN = VDD or GND VDD = 20V
VOUT = 0V
VIN = VDD or GND
VOUT = VDD
VDD = 18V
VDD = 20V
VDD = 18V
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2
3
1
2
3
+25^oC
-2.8 -0.7 V
+25^oC
0.7 2.8
V
+25^oC
VOH > VOL < V
+25^oC
VDD/2 VDD/2
+125^oC
-55^oC
+25^oC, +125^oC, -55^oC -
1.5
V
+25^oC, +125^oC, -55^oC 3.5
-
V
+25^oC, +125^oC, -55^oC -
4
V
+25^oC, +125^oC, -55^oC 11
-
V
+25^oC
+125^oC
-55^oC
+25^oC
+125^oC
-55^oC
-0.4
-
µA
-12
-
µA
-0.4
-
µA
-
0.4 µA
-
12 µA
-
0.4 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
7-1308