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ISL705AEHVF Datasheet, PDF (12/19 Pages) Intersil Corporation – Rad-Hard, 5.0V/3.3V u-Processor Supervisory Circuits
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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Post Radiation Characteristics Unless otherwise specified, VDD = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, VDD = 3.15V to 3.6V
for the ISL706AEH/BEH/CEH TA = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
40
0.62
BIASED
35
BIASED
GROUNDED
30
25
0.61
0.60
GROUNDED
0.59
20
0
25
50
75
100
125
150
krad(Si)
FIGURE 28. ISL706xEH tMD vs LOW DOSE RATE RADIATION
0.58
0
25
50
75
100
125
150
krad(Si)
FIGURE 29. ISL706xEH VPFI vs LOW DOSE RATE RADIATION
20
15
BIASED
10
5
GROUNDED
0
0
25
50
75
100
125
150
krad(Si)
FIGURE 30. ISL706xEH tRPFI vs LOW DOSE RATE RADIATION
40
35
30
25
20
BIASED
15
10
5
0
0
25
GROUNDED
50
75
100
125
150
krad(Si)
FIGURE 31. ISL706xEH tFPFI vs LOW DOSE RATE RADIATION
12
FN8262.0
March 30, 2012
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