ISL3178AE Datasheet, PDF (12/14 Pages) Intersil Corporation – ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers

Die Characteristics
DIE DIMENSIONS
Thickness: 19 mils
1295µm x 1350µm
Interface Materials
GLASSIVATION
Sandwich TEOS & Nitride
TOP METALLIZATION:
Type: Al with 0.5% Cu
Thickness: 28kA
SUBSTRATE
N/A
BACKSIDE FINISH
Silicon/Polysilicon/Oxide
Assembly Related Information
SUBSTRATE POTENTIAL
GND (powered up)
Additional Information
WORST CASE CURRENT DENSITY
N/A
PROCESS
Si GateBiCMOS
TRANSISTOR COUNT
535
PAD OPENING SIZE
90µm x 90µm
WAFER SIZE
200mm (~8 inch)
TRANSISTOR COUNT
535
ISL3178AE
TABLE 2. BOND PAD FUNCTION AND COORDINATES
PAD #
FUNCTION
X
(µm)
Y
(µm)
1
RO
54.5 1086.2
2
RE
54.5
800.2
3
DE
54.5
476.8
4
DI
53.0 318.35
5
GND2
398.55 59.7
6
GND1
508.55 59.7
7
Y
931.70 70.5
8
A (half duplex)
916.25 382.45
9
Z
921.2 694.4
10
B
892.1 830.35
11
A (full duplex)
887.2 1075.2
12
V_CC
517.55 1163.55
12
FN6887.1
May 6, 2009